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Changes in frequency-dependent dielectric features of monolayer graphene/silicon structure due to gamma irradiation

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dc.contributor.authorSeven, Elanur
dc.contributor.authorOrhan, Elif Oz
dc.contributor.authorOcak, Sema Bilge
dc.date.accessioned2026-10-09T21:49:22Z
dc.date.issued2021
dc.departmentYüksek İhtisas Üniversitesi
dc.description.abstractThe present work intends to discover the influences of Co-60 gamma (gamma) ray-irradiation on frequency-dependent dielectric features of Graphene/Silicon Schottky diode with an insulator layer. Graphene (Gr) nanosheets have been synthesized by chemical vapor deposition (CVD) to build a Gr-based p-type Si Schottky diode. The diode was irradiated at 30 kGy and 60 kGy doses. The study has been performed at 300 K in the voltage range -6 V to +6 V at dark conditions both at 400 kHz low-frequency and 900 kHz high-frequency. The experimental results showed that dielectric features of the structure are dependent on the radiation dose and applied voltage and to be a strong function of frequency.
dc.description.sponsorshipScientific Research Council (BAP) of Gazi University [18/2015-03]
dc.description.sponsorshipThe authors gratefully acknowledge the Scientific Research Council (BAP) of Gazi University for the financial support of this research through project numbers 18/2015-03. The authors would like to thank Gazi University Electro-optic Research Laboratory and Gazi University Photonics Application and Research Center.
dc.identifier.doi10.1088/1402-4896/ac369f
dc.identifier.issn0031-8949
dc.identifier.issn1402-4896
dc.identifier.issue12
dc.identifier.orcid0000-0002-3949-6141
dc.identifier.orcid0000-0002-0590-7555
dc.identifier.scopus2-s2.0-85120608543
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1088/1402-4896/ac369f
dc.identifier.urihttps://hdl.handle.net/20.500.12794/3654
dc.identifier.volume96
dc.identifier.wosWOS:000718597800001
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.indekslendigikaynak.digerScience Citation Index Expanded (SCI-EXPANDED)
dc.language.isoen
dc.publisherIop Publishing Ltd
dc.relation.ispartofPhysica Scripta
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20260922
dc.subjectGraphene
dc.subjectAn Insulator Layer
dc.subjectGamma-Ray Irradiation
dc.subjectDielectric Properties
dc.subjectElectrical Conductivity
dc.titleChanges in frequency-dependent dielectric features of monolayer graphene/silicon structure due to gamma irradiation
dc.typeArticle

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